| PART |
Description |
Maker |
| SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
SONY [Sony Corporation]
|
| 3SK147 |
GAAS N-CHANNEL DUAL-GATE MES FET
|
Sony Corporation
|
| 3SK165 3SK165A 3SK165A-0 3SK165A-1 |
GaAs N-channel Dual Gate MES FET
GaAs N-channel Dual Gate MES FET
|
Sony Corporation
|
| SGM2016 SGM2016M SGM2016P SGM2016M_P |
GaAs N-channel Dual-Gate MES FET
From old datasheet system
|
SONY[Sony Corporation]
|
| GN2011 |
GaAs N-Channel MES IC
|
Panasonic
|
| GN1022 |
GaAs N Channel MES Type IC
|
Matsushita Electric Works(Nais)
Panasonic Semiconductor
|
| GN1021 |
GaAs N Channel MES Type IC
|
Matsushita Electric Works(Nais)
|
| NE722S01 NE722S01-T1 |
NECs C TO X BAND N-CHANNEL GaAs MES FET
|
California Eastern Labs
|
| NE6500496 |
4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC]
|
| NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册，S波段功率GaAs场效应晶体管
0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
